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Atomic and molecular adsorption on transition-metal carbide (111) surfaces from density-functional theory: A trend study of surface electronic factors

机译:过渡金属碳化物上的原子和分子吸附(111)   密度泛函理论的表面:表面电子学的趋势研究   因素

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摘要

This study explores atomic and molecular adsorption on a number of earlytransition-metal carbides (TMC's) by means of density-functional theorycalculations. Trend studies are conducted with respect to both period and groupin the periodic table, choosing the substrates ScC, TiC, VC, ZrC, NbC,delta-MoC, TaC, and WC and the adsorbates H, B, C, N, O, F, NH, NH2, and NH3.Trends in adsorption strength are explained in terms of surface electronicfactors, by correlating the calculated adsorption energy values with thecalculated surface electronic structures. The results are rationalized with useof a concerted-coupling model (CCM), which has previously been appliedsuccesfully to the description of adsorption on TiC(111) and TiN(111) surfaces[Solid State Commun. 141, 48 (2007)]. First, the clean TMC(111) surfaces arecharacterized by calculating surface energies, surface relaxations, Badercharges, and surface-localized densities of states (DOS's). Detailedcomparisons between surface and bulk DOS's reveal the existence oftransition-metal localized SR's (TMSR's) in the pseudogap and of severalC-localized SR's (CSR's) in the upper valence band on all considered TMC(111)surfaces. Then, atomic and molecular adsorption energies, geometries, andcharge transfers are presented. An analysis of the adsorbate-induced changes insurface DOS's reveals a presence of both adsorbate--TMSR and adsorbate--CSR'sinteractions, of varying strengths depending on the surface and the adsorbate.These variations are correlated to the variations in adsorption energies. Theresults are used to generalize the content and applications of the previouslyproposed CCM to this larger class of substrates and adsorbates. Implicationsfor other classes of materials, for catalysis, and for other surface processesare discussed.
机译:本研究通过密度泛函理论计算探索了许多早期过渡金属碳化物(TMC)的原子和分子吸附。在周期表中针对周期和组进行了趋势研究,选择了底物ScC,TiC,VC,ZrC,NbC,δ-MoC,TaC和WC以及吸附物H,B,C,N,O,F通过将计算出的吸附能值与计算出的表面电子结构相关联,根据表面电子因子来解释吸附强度的趋势。使用协调耦合模型(CCM)使结果合理化,该模型先前已成功地用于描述TiC(111)和TiN(111)表面的吸附[固态公报]。 141,48(2007)]。首先,通过计算表面能,表面弛豫,Badercharge和表面局部态密度(DOS)来表征干净的TMC(111)表面。表面和本体DOS的详细比较揭示了伪间隙中存在过渡金属局部SR(TMSR),并且在所有考虑的TMC(111)表面上的高价带中存在多个C局部SR(CSR)。然后,介绍了原子和分子的吸附能,几何形状和电荷转移。对吸附剂引起的表面DOS变化的分析表明,存在吸附剂-TMSR和吸附剂-CSR的相互作用,其强度随表面和被吸附物的不同而变化,这些变化与吸附能的变化有关。结果用于将先前提出的CCM的内容和应用推广到这一类更大的基质和吸附物中。讨论了对其他类型的材料,催化以及其他表面过程的影响。

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